Analytical Model for Crosstalk in p-nwell Photodiodes

The response and crosstalk (CTK) of the p-n well photodiode were studied through device simulations performed with ATLAS and experimental data. As a result, a closed-form and explicit 2-D analytical model for its photoresponse and CTK was developed. The model has very few fitting parameters since it...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2015-02, Vol.62 (2), p.580-586
Main Authors: Blanco-Filgueira, Beatriz, Lopez Martinez, Paula, Roldan Aranda, Juan Bautista, Hauer, Johann
Format: Article
Language:English
Subjects:
Analytical models
Crosstalk
Crosstalk (CTK)
Fabrication
Junctions
Lighting
modeling
Photoconductivity
photodiodes (PDs)
Semiconductor device modeling
simulation
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Summary:The response and crosstalk (CTK) of the p-n well photodiode were studied through device simulations performed with ATLAS and experimental data. As a result, a closed-form and explicit 2-D analytical model for its photoresponse and CTK was developed. The model has very few fitting parameters since it is physically based and describes the CTK dependencies on light conditions and physical, geometrical, and process parameters. This is of great interest for pixel design optimization to fulfill high resolution and small area requirements driven by pixel size reduction. As this model extends a previous one focused on p-n + devices, the behavior of both the structures was also compared.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2375345