A low-noise high-sensitivity CMOS image sensor for scientific and industrial applications

A low-noise high-sensitivity CMOS image sensor (CIS) for scientific use is developed and evaluated. The prototype sensor contains 1024(H) × 1024(V) pixels with high performance column-parallel ADCs. The measured maximum quantum efficiency (QE) is 57 % at 660 nm and long-wavelength sensitivity is als...

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Bibliographic Details
Main Authors: Min-Woong Seo, Takasawa, Taishi, Yasutomi, Keita, Kagawa, Keiichiro, Kawahito, Shoji
Format: Conference Proceeding
Language:English
Subjects:
CMOS image sensors
Current measurement
Dark current
Dynamic range
Electron devices
Noise
Sensitivity
Online Access:Request full text
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Summary:A low-noise high-sensitivity CMOS image sensor (CIS) for scientific use is developed and evaluated. The prototype sensor contains 1024(H) × 1024(V) pixels with high performance column-parallel ADCs. The measured maximum quantum efficiency (QE) is 57 % at 660 nm and long-wavelength sensitivity is also enhanced with a large sensing area and the optimized process. In addition, dark current is 0.96 pA/cm 2 at 292 K, temporal random noise in a readout circuitry is 1.17 e - rms , and the conversion gain is 124 μV/e - . The implemented CMOS imager using 0.11-μm CIS technology has very high sensitivity of 87 V/lx·sec that is suitable for scientific and industrial applications such as medical imaging, bioimaging, surveillance cameras, etc.
ISSN:1930-0395
2168-9229
DOI:10.1109/ICSENS.2014.6985467