Towards perfect impedance matching of free space to a 2D material

Graphene, with its distinctive and outstanding optoelectronic properties, has prompted its use in a wide variety of applications such as transparent conductive electrodes and modulators. Recently, due to advances in graphene synthesis methods, large-area graphene field effect transistors (GFET) have...

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Bibliographic Details
Main Authors: Pham, Phi H. Q., Yung-Yu Wang, Burke, Peter, Weidong Zhang, Brown, Elliott
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Frequency measurement
Graphene
Impedance
Logic gates
Silicon
Terahertz
THz
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Summary:Graphene, with its distinctive and outstanding optoelectronic properties, has prompted its use in a wide variety of applications such as transparent conductive electrodes and modulators. Recently, due to advances in graphene synthesis methods, large-area graphene field effect transistors (GFET) have displayed unique modulation of terahertz waves. By transferring chemical vapor deposited graphene films (~1cm × 1cm) onto a high resistivity silicon substrate to fabricate a GFET, we calculate the AC conductivity extrapolated by measuring the terahertz transmission. We demonstrate the tunable modulation of the AC conductivity using a DC gate voltage, in parallel with broadband (0.2-1.2 THz) frequency domain measurements.
DOI:10.1109/EuMC.2014.6986722