Photochemically Activated Flexible Metal-Oxide Transistors and Circuits Using Low Impurity Aqueous System

High mobility flexible metal-oxide thin-film transistors and circuits have been fabricated on an ultrathin plastic substrate using environmentally benign aqueous solution system and low-temperature photochemical activation process (~ 150 °C). Results show that the indium-gallium-zinc oxide (IGZO) th...

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Bibliographic Details
Published in:IEEE electron device letters 2015-02, Vol.36 (2), p.162-164
Main Authors: Jae-Sang Heo, Jae-Hyun Kim, Jaekyun Kim, Myung-Gil Kim, Yong-Hoon Kim, Sung Kyu Park
Format: Article
Language:English
Subjects:
Aqueous solution
Carbon
Impurities
photochemical activation
Ring oscillators
Solvents
Thin film transistors
thin-film transistor
Zinc
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Summary:High mobility flexible metal-oxide thin-film transistors and circuits have been fabricated on an ultrathin plastic substrate using environmentally benign aqueous solution system and low-temperature photochemical activation process (~ 150 °C). Results show that the indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) fabricated from nitrate-based precursors in aqueous solution outperform the devices from acetate-based precursors in alcohol solution. Here, IGZO TFTs and seven-stage ring oscillators are demonstrated on a 3~5 μm-thick polyimide substrates with an average mobility of >6.9 cm 2 /V-s, subthreshold slope of ~0.14 V/decade, and oscillation frequency of ~ 340 kHz corresponding to 210 ns of propagation delay per stage at a supply bias of 20 V.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2382136