High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs

We propose a way to achieve high-speed circuits with dual-gate (DG) bulk-accumulation back-channeletched (BCE) amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) using the pseudo-CMOS structure. The DG BCE a-IGZO TFTs exhibit field-effect mobility (μ FE ), threshold voltage (V...

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Bibliographic Details
Published in:IEEE electron device letters 2015-02, Vol.36 (2), p.153-155
Main Authors: Yuanfeng Chen, Di Geng, Mativenga, Mallory, Hyoungsik Nam, Jin Jang
Format: Article
Language:English
Subjects:
a-IGZO TFTs
Barium
bulk accumulation
Delays
Inverters
Logic gates
pseudo-CMOS
ring oscillator
Ring oscillators
Thin film transistors
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Summary:We propose a way to achieve high-speed circuits with dual-gate (DG) bulk-accumulation back-channeletched (BCE) amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) using the pseudo-CMOS structure. The DG BCE a-IGZO TFTs exhibit field-effect mobility (μ FE ), threshold voltage (Vth), and subthreshold swing of 30 ± 3 cm 2 /Vs, 2 ± 0.5 V, and 120 ± 30 mV/decade, respectively. For input voltage (V DD ) of 20 V, seven-stage pseudo-CMOS ring oscillators implemented with the BCE bulk-accumulation a-IGZO TFTs show oscillation frequency of 6.51 MHz, which corresponds to a propagation delay time of 11 ns/stage and is faster than the 17 ns/stage delay of the fastest single-gate-driven ratioed coplanar a-IGZO TFT circuits.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2379700