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Electrochromic Device Integrated With GaInP/GaAs/Ge Triple-Junction Solar Cell
We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tinoxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO 3 /ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the b...
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Published in: | IEEE electron device letters 2015-02, Vol.36 (2), p.207-209 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tinoxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO 3 /ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It was found that the maximum transmittance in the bleached state was 68.05% at 580 nm. With a solar radiation intensity of 100 mW/cm 2 , it was found that an optical contrast in transmittance at 580 nm could reach 58.73%. It was also found that the coloration time and bleaching time of the integration CECD/TJ solar cell system were 6 and 15 s, respectively. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2014.2385865 |