A systematic approach for analyzing and optimizing cell-internal signal electromigration

Electromigration (EM) in on-chip metal interconnects is a critical reliability failure mechanism in nanometer-scale technologies. This work addresses the problem of EM on signal interconnects within a standard cell. An approach for modeling and efficient characterization of cell-internal EM is devel...

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Bibliographic Details
Main Authors: Posser, Gracieli, Mishra, Vivek, Jain, Palkesh, Reis, Ricardo, Sapatnekar, Sachin S.
Format: Conference Proceeding
Language:English
Subjects:
Current density
Discharges (electric)
Layout
Libraries
Metals
Switches
Wires
Online Access:Request full text
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Description
Summary:Electromigration (EM) in on-chip metal interconnects is a critical reliability failure mechanism in nanometer-scale technologies. This work addresses the problem of EM on signal interconnects within a standard cell. An approach for modeling and efficient characterization of cell-internal EM is developed, incorporating Joule heating effects, and is used to analyze the lifetime of large benchmark circuits. Further, a method for optimizing the circuit lifetime using minor layout modifications is proposed.
ISSN:1092-3152
1558-2434
DOI:10.1109/ICCAD.2014.7001395