Single Event Effects in Power MOSFETs and IGBTs Due to 14 MeV and 25 meV Neutrons

Single Event Effect (SEE) characterizations under 14 MeV and 25 meV neutrons are presented for various commercial power electronic components: power metal-oxide-semiconductor field effect transistors (MOSFET) and insulated gate bipolar transistors (IGBT).

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Bibliographic Details
Main Authors: Lambert, Damien, Desnoyers, Francois, Thouvenot, Didier, Azais, Bruno
Format: Conference Proceeding
Language:English
Subjects:
Aerospace electronics
Guidelines
Insulated gate bipolar transistors
MOSFET
Neutrons
Safety
Online Access:Request full text
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Description
Summary:Single Event Effect (SEE) characterizations under 14 MeV and 25 meV neutrons are presented for various commercial power electronic components: power metal-oxide-semiconductor field effect transistors (MOSFET) and insulated gate bipolar transistors (IGBT).
ISSN:2154-0519
2154-0535
DOI:10.1109/REDW.2014.7004592