Device Characteristics of TSV-Based Piezoelectric Resonator With Load Capacitance and Static Capacitance Modification

The piezoelectric resonator device based on 3-D integration technologies and hermetic sealing bonding is presented with conventional semiconductor process. To pursue small form factor, high-performance, and cost-effective technologies, this through-silicon via (TSV)-based resonator is fabricated by...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2015-03, Vol.62 (3), p.927-933
Main Authors: Shih, Jian-Yu, Chen, Yen-Chi, Chiu, Chih-Hung, Lo, Chung-Lun, Chang, Chi-Chung, Chen, Kuan-Neng
Format: Article
Language:English
Subjects:
3-D integration
Bonding
Capacitance
Frequency measurement
Performance evaluation
piezoelectric resonator device
Resonant frequency
Substrates
through-silicon via (TSV)
Tin
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Summary:The piezoelectric resonator device based on 3-D integration technologies and hermetic sealing bonding is presented with conventional semiconductor process. To pursue small form factor, high-performance, and cost-effective technologies, this through-silicon via (TSV)-based resonator is fabricated by CuSn eutectic bonding for hermeticity, wafer-level thinning, and Cu TSVs interconnection, while high-temperature cofired ceramic (HTCC) with metal lid is applied in the conventional resonator devices. The device characteristics and reliability of TSV-based resonator reveal it has great performance and outstanding quality. In addition, the device characteristics with load capacitance and its improvement through modification of the isolation in TSV-based substrate are discussed in this research. Demonstrations of these characteristics show that the TSV-based resonator possesses advantages and compatibility with current semiconductor process, as well as the manufacturability compared with the conventional metal lid with HTCC enclosures.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2014.2387231