Photosensitive insulation coating for a copper redistribution layer process

Redistribution on a through-silicon via (TSV) with a copper interconnection and dielectric layer is one of the key components for a silicon-based interposer. In this paper, we report lithographic and mechanical performance for a positive-tone photosensitive insulation coating, CA6001B. Minimum resol...

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Bibliographic Details
Main Authors: Matsutani, Hiroshi, Mitsukura, Kazuyuki, Makino, Tatsuya, Duval, Fabrice, Detalle, Mikael, Miller, Andy, Beyne, Eric
Format: Conference Proceeding
Language:English
Subjects:
Coatings
Copper
dielectric
Dielectrics
Electric variables measurement
Insulation
interposer
redistribution
resolution
Silicon
stress
Through-silicon vias
TSV
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Description
Summary:Redistribution on a through-silicon via (TSV) with a copper interconnection and dielectric layer is one of the key components for a silicon-based interposer. In this paper, we report lithographic and mechanical performance for a positive-tone photosensitive insulation coating, CA6001B. Minimum resolution for CA6001B is 3 μm determined by electrical measurement with a test wafer having a copper redistribution and the patterned insulation layers. The CA6001B is one of the promising dielectric coatings for interposers possessing TSV and redistribution layer (RDL) structures.
ISSN:2373-5449
2475-8418
DOI:10.1109/ICSJ.2014.7009622