Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs

This paper investigates the ground plane influence on Ultra Thin Body and Buried Oxide (UTBB) FDSOI devices applied in a dynamic threshold voltage (DT) operation (V B =V G ) over the conventional one (V B =0V). The ground plane in enhanced DT (eDT), where the back gate bias is a multiple value of th...

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Bibliographic Details
Main Authors: Sasaki, K. R. A., Manini, M. B., Martino, J. A., Aoulaiche, M., Simoen, E., Witters, L., Claeys, C.
Format: Conference Proceeding
Language:English
Subjects:
Conferences
Couplings
DTMOS
ground plane
Logic gates
MOSFET
Silicon-on-insulator
Threshold voltage
Transconductance
UTBB
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Summary:This paper investigates the ground plane influence on Ultra Thin Body and Buried Oxide (UTBB) FDSOI devices applied in a dynamic threshold voltage (DT) operation (V B =V G ) over the conventional one (V B =0V). The ground plane in enhanced DT (eDT), where the back gate bias is a multiple value of the front gate one (V B =k×V G ) and the inverse eDT mode (V G =k×V B ) were also considered and compared to the other configurations. The presence of the Ground Plane region in all DT configurations results in superior DC parameters like on-current/off-current ratio, a steeper subthreshold slope and a higher transconductance.
ISSN:2165-3542
DOI:10.1109/ICCDCS.2014.7016149