Study on voltage oscillation phenomenon in high power P-i-N diode

The voltage oscillation mechanism with an anomalous spike voltage during reverse recovery of a P-i-N diode has been studied for the first time. The anomalous spike voltage starts to appear when the reverse bias V/sub RB/ just becomes larger than the threshold reverse power supply voltage V/sub RB/(t...

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Bibliographic Details
Main Authors: Nemoto, M., Takahashi, H., Fujii, T., Iwamuro, N., Seki, Y.
Format: Conference Proceeding
Language:English
Subjects:
Anodes
Cathodes
Circuit simulation
Current density
Inductance
Laboratories
P-i-n diodes
Rectifiers
Research and development
Threshold voltage
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Summary:The voltage oscillation mechanism with an anomalous spike voltage during reverse recovery of a P-i-N diode has been studied for the first time. The anomalous spike voltage starts to appear when the reverse bias V/sub RB/ just becomes larger than the threshold reverse power supply voltage V/sub RB/(th). As the initial forward current density I/sub F/ decreases below 20 A/cm/sup 2/, V/sub RB/(th) becomes lower than the punch-through voltage V/sub PT/, since the excess carrier disappears before the depletion layer reaches the N/sup +/ cathode region during the reverse recovery process. Furthermore, measurements were also done to corroborate numerical results. Based upon these results, a newly developed diode was successfully designed and fabricated in order to reduce voltage oscillations.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.1998.702694