Impact of Fin Width and Back Bias Under Hot Carrier Injection on Double-Gate FinFETs

This study compares the effects of n-channel double-gate FinFETs with fin widths (W fin ) of 10 and 25 nm with those of such devices with back biases and hot carrier injection (HCI). Compared with the device with a wide W fin , the device with a narrow W fin exhibits a larger current tuning range bu...

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Bibliographic Details
Published in:IEEE transactions on device and materials reliability 2015-03, Vol.15 (1), p.86-89
Main Authors: Chang, Wen-Teng, Cin, Li-Gong, Yeh, Wen-Kuan
Format: Magazinearticle
Language:English
Subjects:
back bias
Degradation
FinFET
FinFETs
hot carrier injection
Hot carriers
Human computer interaction
Logic gates
subthreshold swing
Threshold voltage
transconductance
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Summary:This study compares the effects of n-channel double-gate FinFETs with fin widths (W fin ) of 10 and 25 nm with those of such devices with back biases and hot carrier injection (HCI). Compared with the device with a wide W fin , the device with a narrow W fin exhibits a larger current tuning range but a more off-state current leakage at a positive back bias because of the forward-biased p-n junction and the higher degradation under HCI. The gate-induced drain leakage significantly deteriorates with a positive back bias after HCI because of the generation of interfacial charges. However, a negative back bias causing hot hole injection during HCI can alleviate the degradation compared with unbiased and positive-biased devices.
ISSN:1530-4388
1558-2574
DOI:10.1109/TDMR.2014.2384737