Analysis of high current breakdown and UIS behavior of resurf LDMOS (RLDMOS) devices

This work analyzes unclamped inductive switching (UIS) behavior of two types of 40 V resurf (reduced surface field) lateral diffused MOSFETs (RLDMOSFETs). It is shown that the addition of a deep buffer implant region on the drain side of the device increases the snap-back current limit as well as UI...

Full description

Saved in:
Bibliographic Details
Main Authors: Pendharkar, S., Efland, T., Tsai, C.-Y.
Format: Conference Proceeding
Language:English
Subjects:
CMOS process
Doping
Electric breakdown
Implants
Instruments
MOSFETs
Robustness
Signal analysis
Stress
Voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This work analyzes unclamped inductive switching (UIS) behavior of two types of 40 V resurf (reduced surface field) lateral diffused MOSFETs (RLDMOSFETs). It is shown that the addition of a deep buffer implant region on the drain side of the device increases the snap-back current limit as well as UIS robustness. It is also shown, using 2D simulation, that the failure current limit under UIS conditions is not the same as the current at which the parasitic BJT turns on.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.1998.702735