28 nm FD SOI Technology Platform RF FoM

This work provides a detailed study of 28 nm fully-depleted silicon-on-insulator (FD SOI) ultra-thin body and buried oxide (BOX) (UTBB) MOSFETs for high frequency applications. RF figures of merit (FoM), i.e. the current gain cut-off frequency (f T ) and the maximum oscillation frequency (f max ), a...

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Bibliographic Details
Main Authors: Esfeh, B. Kazemi, Kilchytska, V., Barral, V., Planes, N., Haond, M., Flandre, D., Raskin, J.-P
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Equivalent circuits
FD-SOI MOSFET
Fingers
Logic gates
MOSFET
Radio frequency
RF FIGURES OF MERIT
UTBB
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Summary:This work provides a detailed study of 28 nm fully-depleted silicon-on-insulator (FD SOI) ultra-thin body and buried oxide (BOX) (UTBB) MOSFETs for high frequency applications. RF figures of merit (FoM), i.e. the current gain cut-off frequency (f T ) and the maximum oscillation frequency (f max ), are presented for different transistor geometries. The parasitic gate and source/drain series resistances, as well as capacitances and their effect on RF performance are analyzed.
ISSN:1078-621X
2577-2295
DOI:10.1109/S3S.2014.7028208