Investigation of mid-infrared AlInSb LEDs with an n-i-p structure

We report on the investigation on mid-infrared AlInSb LEDs with an n-i-p structure. Compared to the conventional AlInSb LEDs with a p-i-n structure, a better current spreading corresponding to a uniform current distribution in the active region is expected in the n-i-p structure because of a high el...

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Bibliographic Details
Main Authors: Ying Ding, Meriggi, Laura, Steer, Matthew J., Thayne, Iain G., MacGregor, Calum, Sorel, Marc, Ironside, Charles N.
Format: Conference Proceeding
Language:English
Subjects:
Current density
Educational institutions
Electrodes
Electroluminescence (EL)
Geometry
Light emitting diodes
Light emitting diodes (LEDs)
Materials
Mid-infrared
p-i-n diodes
PIN photodiodes
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Summary:We report on the investigation on mid-infrared AlInSb LEDs with an n-i-p structure. Compared to the conventional AlInSb LEDs with a p-i-n structure, a better current spreading corresponding to a uniform current distribution in the active region is expected in the n-i-p structure because of a high electron mobility in the n-type AlInSb material. The output optical power of laterally injected LEDs were investigated as a function of the device geometry by COMSOL simulations and confirmed by experimental results.
ISSN:1097-2137
2377-5505
DOI:10.1109/COMMAD.2014.7038646