Nanoindentation of Si1−xGex thin films prepared by biased target ion beam deposition

The mechanical properties of Si 1-x Ge x thin films are studied via nanoindentation. The Si 1-x Ge x thin films are prepared with a biased target ion beam deposition (BTIBD) method. We investigate the effect of varying the Si to Ge composition ratio on the elastic modulus and hardness of the resulti...

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Bibliographic Details
Main Authors: Ruijing Ge, Xiaowei Hou, Brookshire, Kirsten, Krishnan, N. Radha, Silva, Dilusha, Bumgarner, John, Yinong Liu, Faraone, Lorenzo, Martyniuk, Mariusz
Format: Conference Proceeding
Language:English
Subjects:
amorphous silicon
BTIBD
Germanium
hardness
Ion beams
nanoindentation
Silicon
Substrates
Young's modulus
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Summary:The mechanical properties of Si 1-x Ge x thin films are studied via nanoindentation. The Si 1-x Ge x thin films are prepared with a biased target ion beam deposition (BTIBD) method. We investigate the effect of varying the Si to Ge composition ratio on the elastic modulus and hardness of the resulting alloyed films. In comparison to pure BTIBD Si (E si = 154GPa, H si = 9.9GPa), for Si 1-x Ge x a decreasing trend in Young's modulus and hardness is observed to be associated with the increase in Ge content, and for Si 0.5 Ge 0.5 the values of 139 GPa and 8.4GPa are found to represent the Young's modulus and hardness, respectively.
ISSN:1097-2137
2377-5505
DOI:10.1109/COMMAD.2014.7038692