Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETs

In this paper, an analysis of gate-source and gate-drain scaling effects in MESFETs fabricated on hydrogen-terminated single-crystal diamond films is reported. The experimental results show that a decrease in gate-source spacing can improve the device performance by increasing the device output curr...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2015-04, Vol.62 (4), p.1150-1156
Main Authors: Verona, Claudio, Ciccognani, Walter, Colangeli, Sergio, Di Pietrantonio, Fabio, Giovine, Ennio, Limiti, Ernesto, Marinelli, Marco, Verona-Rinati, Gianluca
Format: Article
Language:English
Subjects:
Current density
Diamond
Diamonds
Geometry
Logic gates
MESFETs
output current
Performance evaluation
semiconductor device manufacture
transconductance
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Summary:In this paper, an analysis of gate-source and gate-drain scaling effects in MESFETs fabricated on hydrogen-terminated single-crystal diamond films is reported. The experimental results show that a decrease in gate-source spacing can improve the device performance by increasing the device output current density and its transconductance. On the contrary, the gate-drain distance produces less pronounced effects on device performance. Breakdown voltage, knee voltage, and threshold voltage variations due to changes in gate-source and drain-source distances have also been investigated. The obtained results can be used as a design guideline for the layout optimization of H-terminated diamond-based MESFETs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2015.2398891