Bendable organic memristors in a crossbar array: Applications to information storage

This article demonstrates a bendable 256-bit organic memristor in a crossbar array fabricated from a composite of fullerene organic semiconductor and polymer matrix. Electrical measurements indicated that the memristor cell can be reversibly switched at a voltage pulse of -4 or 4 V for 1 μs. The ope...

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Bibliographic Details
Main Author: Toan Thanh Dao
Format: Conference Proceeding
Language:English
Subjects:
Arrays
bendable electronics
Memristors
next generation non-volatile memory
Nonvolatile memory
organic memristor
organic semiconductor
Plastics
Polymers
Programming
ReRAM
Substrates
threshold voltage
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Summary:This article demonstrates a bendable 256-bit organic memristor in a crossbar array fabricated from a composite of fullerene organic semiconductor and polymer matrix. Electrical measurements indicated that the memristor cell can be reversibly switched at a voltage pulse of -4 or 4 V for 1 μs. The operating mechanism was attributed to the charge storage of fullerene. The memristor exhibited highly reliable with the stable retention time characteristics with a large on/off current ratio of five orders of magnitude at 0.5 V. These obtained results suggest that the memristor based on fullerene can be utilized for storing information in bendable electronics.
ISSN:2162-1020
2162-1039
DOI:10.1109/ATC.2014.7043351