Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology

The effectiveness of amorphous metal gate (MG) in suppressing low-frequency noise (LFN) for FinFETs has been thoroughly investigated. It was demonstrated that the amorphous TaSiN MGs with various atomic compositions provide flexible tuning of threshold voltage (V t ) as well as small V t variability...

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Bibliographic Details
Main Authors: Matsukawa, Takashi, Fukuda, Koichi, Yongxun Liu, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Endo, Kazuhiko, O'uchi, Shin-ichi, Migita, Shinji, Mizubayashi, Wataru, Morita, Yukinori, Ota, Hiroyuki, Masahara, Meishoku
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Correlation
FinFETs
Fluctuations
Logic gates
Silicon
Tin
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Summary:The effectiveness of amorphous metal gate (MG) in suppressing low-frequency noise (LFN) for FinFETs has been thoroughly investigated. It was demonstrated that the amorphous TaSiN MGs with various atomic compositions provide flexible tuning of threshold voltage (V t ) as well as small V t variability, namely A Vt . It was found that the TaSiN-MG FinFETs exhibit drastic reduction of LFN in comparison to the poly-crystalline TiN MG case. Modelling by 3D-TCAD reveals that work function variation (WFV) of the MG has a significant impact on LFN generation. Suppression of A Vt and LFN is highly beneficial to conduct further scaling of analog/digital components in SoC.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2014.7047035