New insights into the design for end-of-life variability of NBTI in scaled high-κ/metal-gate Technology for the nano-reliability era

In this paper, a new methodology for the assessment of end-of-life variability of NBTI is proposed for the first time. By introducing the concept of characteristic failure probability, the uncertainty in the predicted 10-year VDD is addressed. Based on this, variability resulted from NBTI degradatio...

Full description

Saved in:
Bibliographic Details
Main Authors: Pengpeng Ren, Runsheng Wang, Zhigang Ji, Peng Hao, Xiaobo Jiang, Shaofeng Guo, Mulong Luo, Meng Duan, Zhang, Jian F., Jianping Wang, Jinhua Liu, Weihai Bu, Jingang Wu, Waisum Wong, Yu Shaofeng, Hanming Wu, Shiuh-Wuu Lee, Nuo Xu, Ru Huang
Format: Conference Proceeding
Language:English
Subjects:
Degradation
Dispersion
FinFETs
Logic gates
Nanoscale devices
Probability
Stress
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, a new methodology for the assessment of end-of-life variability of NBTI is proposed for the first time. By introducing the concept of characteristic failure probability, the uncertainty in the predicted 10-year VDD is addressed. Based on this, variability resulted from NBTI degradation at end of life under specific VDD is extensively studied with a novel characterization technique. With the further circuit level analysis based on this new methodology, the timing margin can be relaxed. The new methodology has also been extended to FinFET in this work. The wide applicability of this methodology is helpful to future reliability/variability-aware circuit design in nano-CMOS technology.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2014.7047165