13.56-MHz Class-E RF power amplifier using normally-on GaN HEMT

Gallium nitride high-electron mobility transistors (GaN HEMTs) have attractive properties, low on-resistances and fast switching speeds. This paper presents the characteristics of a normally-on GaN HEMT that we fabricated. Further, the circuit operation of a Class-E amplifier is analyzed. Experiment...

Full description

Saved in:
Bibliographic Details
Main Authors: Okamoto, Masayuki, Tanaka, Toshihiko, Matuzaki, Koyo, Hashizume, Tamotsu, Yamada, Hiroaki
Format: Conference Proceeding
Language:English
Subjects:
13.56-MHz RF amplifier
Capacitors
class-E amplifie
Educational institutions
Gallium nitride
GaN HEMT
HEMTs
Inductors
Logic gates
normally-on device
Power amplifiers
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Gallium nitride high-electron mobility transistors (GaN HEMTs) have attractive properties, low on-resistances and fast switching speeds. This paper presents the characteristics of a normally-on GaN HEMT that we fabricated. Further, the circuit operation of a Class-E amplifier is analyzed. Experimental results demonstrate the excellent performance of the gate drive circuit for the normally-on GaN HEMT and the 13.56MHz radio frequency (RF) power amplifier.
ISSN:1553-572X
DOI:10.1109/IECON.2014.7048621