Two-step planarized Al-Cu PVD process using long throw sputtering technology

In this paper, comprehensive studies on planarized Al alloy interconnect and contact plug technology using long-throw-sputtering (LTS) and two-step cold/hot Al flow technologies are presented. Experimental results demonstrate that LTS-based cold/hot Al PVD technology is capable of completely filling...

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Bibliographic Details
Main Authors: Ku, T.-K., Chen, H.-C., Mizusawa, Y., Motegi, N., Kondo, T., Toyoda, S., Wei, C., Chen, J., Chen, L.-J.
Format: Conference Proceeding
Language:English
Subjects:
Artificial intelligence
Atherosclerosis
Dielectric substrates
Filling
Lifting equipment
Metallization
Plasma temperature
Plugs
Sputtering
Tin
Online Access:Request full text
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Summary:In this paper, comprehensive studies on planarized Al alloy interconnect and contact plug technology using long-throw-sputtering (LTS) and two-step cold/hot Al flow technologies are presented. Experimental results demonstrate that LTS-based cold/hot Al PVD technology is capable of completely filling contact holes as small as 0.3 /spl mu/m and simultaneously planarizing the Al wiring at process temperatures as low as 420/spl deg/C. The wider process window and excellent Al(111) preferred texture suggest that this technology is an attractive alternative to conventional W/Al interconnect metallization.
DOI:10.1109/IITC.1998.704906