1/ f Noise Characteristics of MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures

We report on the transport and low-frequency noise measurements of MoS 2 thin-film transistors (TFTs) with thin (2-3 atomic layers) and thick (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS 2 channels have advantages of the higher electron mobility and l...

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Bibliographic Details
Published in:IEEE electron device letters 2015-05, Vol.36 (5), p.517-519
Main Authors: Rumyantsev, Sergey L., Chenglong Jiang, Samnakay, Rameez, Shur, Michael S., Balandin, Alexander A.
Format: Article
Language:English
Subjects:
Atomic layer deposition
Graphene
Logic gates
Low-frequency noise
MoS2 thin-film transistor
noise
Thin film transistors
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Summary:We report on the transport and low-frequency noise measurements of MoS 2 thin-film transistors (TFTs) with thin (2-3 atomic layers) and thick (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS 2 channels have advantages of the higher electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/f noise in thick MoS 2 transistors is of the same level as that in graphene. The MoS 2 transistors with the atomically thin channels have substantially higher noise levels. It was established that, unlike in graphene devices, the noise characteristics of MoS 2 transistors with thick channels (15-18 atomic planes) could be described by the McWhorter model. Our results indicate that the channel thickness optimization is crucial for practical applications of MoS 2 TFTs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2412536