Optimizing the performance of a solar cell based on new materials

This work is based on modeling and simulation GaAsNBi/GaAs structure. The structure was optimized to improve the efficiency of conversion. The effect of concentrations of N and Bi on the strained, energy bandgap, and the characteristic J (V) is taken into consideration. For concentrations (N = 2%, B...

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Bibliographic Details
Main Authors: Aissat, Abdelkader, Benahmed, A. Moumene, Bestam, Rachid, Vilcot, Jean Pierre
Format: Conference Proceeding
Language:English
Subjects:
Bismuth
GaAsNBi
Gallium arsenide
New Materials
Nitrogen
Photonic band gap
photovoltaics
Propulsion
Quantum mechanics
Semiconductor III-V
solar cell
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Summary:This work is based on modeling and simulation GaAsNBi/GaAs structure. The structure was optimized to improve the efficiency of conversion. The effect of concentrations of N and Bi on the strained, energy bandgap, and the characteristic J (V) is taken into consideration. For concentrations (N = 2%, Bi = 8%) energy bandgap is 0.90eV. If we increase the two concentrations (N = 3%, Bi = 12%) the gap equal to 0.62eV. This allows us to grow the absorption and performance. For (N = 2%, Bi = 10) was obtained in an acquiesce of approximately 24.5%. This study allows us to improve the efficiency of solar cells and multi-quantum wells.
ISSN:2380-7385
DOI:10.1109/IRSEC.2014.7059748