Effect of TiOx-based tunnel barrier on non-linearity and switching reliability of resistive random access memory

In this paper, the effect of the titanium oxide-based tunnel barrier on the non-linearity and switching uniformity of resistive random access memory has been investigated with the object of achieving excellent device non-linearity and reliability for cross-point array applications. To form the tunne...

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Bibliographic Details
Main Authors: Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jeonghwan Song, Jaesung Park, Kibong Moon, Yunmo Koo, Seokjae Lim, Jaehyuk Park, Prakash, Amit, Hyunsang Hwang
Format: Conference Proceeding
Language:English
Subjects:
Arrays
Leakage currents
Non-linearity
Nonvolatile memory
Reliability
Resistance
Resistive switching
Switches
Tunneling
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Summary:In this paper, the effect of the titanium oxide-based tunnel barrier on the non-linearity and switching uniformity of resistive random access memory has been investigated with the object of achieving excellent device non-linearity and reliability for cross-point array applications. To form the tunnel barrier of titanium oxide, its thickness was engineered using the deposition time. The tunnel barrier effectively controls the current flow in the devices with a tunneling mechanism that modifies the tunnel barrier thickness for non-linearity and switching reliability of devices. The tunnel barrier controls the current behavior of the device because most of the bias is applied to the tunnel barrier owing to its dominant resistance state. In addition, the tunnel barrier can exhibit uniform resistive switching during the set operation with the controlled current flow.
DOI:10.1109/NVMTS.2014.7060861