Adjustable voltage dependent switching characteristics of PRAM for low voltage programming of multi-level resistances

Low voltage programming of multi-level-cell phase change random access memory (MLC PRAM) is important for future low power high density applications of PRAM devices [1]. We have characterized voltage dependent resistance switching characteristics of PRAM devices with various voltage pulses, based on...

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Bibliographic Details
Main Authors: Gwihyun Kim, Sanghyun Lee, Seungwoo Hong, Seung Jae Baik, Hori, Hideki, Dong-ho Ahn
Format: Conference Proceeding
Language:English
Subjects:
Low voltage
microstructual model
MLC PRAM
Phase change random access memory
Programming
programming pulse
reset initialization
Resistance
Switches
Threshold voltage
Voltage control
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Summary:Low voltage programming of multi-level-cell phase change random access memory (MLC PRAM) is important for future low power high density applications of PRAM devices [1]. We have characterized voltage dependent resistance switching characteristics of PRAM devices with various voltage pulses, based on which a dual-pulse programming method is systematically proposed to demonstrate some principles of low voltage MLC programming. A microstructural model is also introduced to provide a comprehensive explanation of resistance swiching for various voltage pulses.
DOI:10.1109/NVMTS.2014.7060862