Adjustable voltage dependent switching characteristics of PRAM for low voltage programming of multi-level resistances

Low voltage programming of multi-level-cell phase change random access memory (MLC PRAM) is important for future low power high density applications of PRAM devices [1]. We have characterized voltage dependent resistance switching characteristics of PRAM devices with various voltage pulses, based on...

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Main Authors: Gwihyun Kim, Sanghyun Lee, Seungwoo Hong, Seung Jae Baik, Hori, Hideki, Dong-ho Ahn
Format: Conference Proceeding
Language:English
Subjects:
Low voltage
microstructual model
MLC PRAM
Phase change random access memory
Programming
programming pulse
reset initialization
Resistance
Switches
Threshold voltage
Voltage control
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creator Gwihyun Kim
Sanghyun Lee
Seungwoo Hong
Seung Jae Baik
Hori, Hideki
Dong-ho Ahn
description Low voltage programming of multi-level-cell phase change random access memory (MLC PRAM) is important for future low power high density applications of PRAM devices [1]. We have characterized voltage dependent resistance switching characteristics of PRAM devices with various voltage pulses, based on which a dual-pulse programming method is systematically proposed to demonstrate some principles of low voltage MLC programming. A microstructural model is also introduced to provide a comprehensive explanation of resistance swiching for various voltage pulses.
doi_str_mv 10.1109/NVMTS.2014.7060862
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Low voltage
microstructual model
MLC PRAM
Phase change random access memory
Programming
programming pulse
reset initialization
Resistance
Switches
Threshold voltage
Voltage control
title Adjustable voltage dependent switching characteristics of PRAM for low voltage programming of multi-level resistances
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