Characterization of flexible CMOS technology tranferred onto a metallic foil

In this work we demonstrate a method to transfer high-performance industrial CMOS circuits thinned down to 5.7 μm and bond onto a 25-μm-thick stainless steel foil with a 800-nm-thick indium layer. The bonding is performed at the temperature of 100°C with an applied pressure of 1.2 bar. The die stack...

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Bibliographic Details
Main Authors: Philippe, Justine, Lecavelier des Etangs-Levallois, Aurelien, Latzel, Philip, Danneville, Francois, Robillarcf, Jean-Francois, Gloria, Daniel, Dubois, Emmanuel
Format: Conference Proceeding
Language:English
Subjects:
Bonding
CMOS
CMOS integrated circuits
inorganic substrate
metallic bonding
MOSFET circuits
Radio frequency
Silicon
stainless steel
Steel
Substrates
thin film
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Summary:In this work we demonstrate a method to transfer high-performance industrial CMOS circuits thinned down to 5.7 μm and bond onto a 25-μm-thick stainless steel foil with a 800-nm-thick indium layer. The bonding is performed at the temperature of 100°C with an applied pressure of 1.2 bar. The die stack transferred onto the metallic substrate comprises the 200-nm-thick active layer and the 5.5-μm-thick interconnection multilayer stack resulting in a light, compact, and bendable thin film. We unveil that DC and RF performances are invariant after the transfer onto this metallic substrate. Unity-current-gain cutoff and maximum frequencies as high as 163/188 GHz for n-MOSFETs and 100/159 GHz for p-MOSFETs have been measured.
DOI:10.1109/ULIS.2015.7063747