Spatial variability in large area single and few-layer CVD graphene

Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield...

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Bibliographic Details
Main Authors: Moldovan, Clara F., Gajewski, Krzysztof, Tamagnone, Michele, Weatherup, Robert S., Sugime, Hisashi, Szumska, Anna, Vitale, Wolfgang A., Robertson, John, Ionescu, Adrian M.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum oxide
bilayer
Conductivity
CVD
Fermi level
FTIR
Graphene
KPFM
large-scale devices
multilayer
Nanoscale devices
Probes
Spectroscopy
substrate
Substrates
variability
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Summary:Variability in graphene can result from the material synthesis or post-processing steps as well as the surrounding environment. This is a critical issue for the performance of large area devices as well as for the large-scale production of micro- and nano-scale graphene devices, leading to low yield and reliability. The aim of this study is to investigate variability of single and few-layer graphene structures, on different substrates, and the effects it has on its electronic properties. We demonstrate a combination of Kelvin probe force microscopy (KPFM) and non-contact Fourier transform infrared spectroscopy (FTIR) measurements for centimeter-scale quantitative mapping of the electrical variability of large-area chemical vapor deposited graphene films. KPFM provides statistical insight into the influence of micro-scale defects on the surface potential, while FTIR gives the spatially averaged chemical potential of the graphene structures. Test structures consisting of single-, bi- and few-layer graphene on SiO 2 and Al 2 O 3 were fabricated and analyzed.
DOI:10.1109/ULIS.2015.7063779