High-Performance Amorphous InGaZnO Thin-Film Transistors With HfO2/Lu2O3/HfO2 Sandwich Gate Dielectrics

In this brief, a high-performance amorphous InGaZnO (α-IGZO) thin-film transistor (TFT) with a HfO 2 /Lu 2 O 3 /HfO 2 (HLH) sandwich gate dielectric is demonstrated for the first time. Compared with the Lu 2 O 3 dielectric, the α-IGZO TFT device using an HLH sandwich gate dielectric exhibited a low...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2015-05, Vol.62 (5), p.1659-1662
Main Authors: Her, Jim-Long, Chen, Fa-Hsyang, Li, Wei-Chen, Pan, Tung-Ming
Format: Article
Language:English
Subjects:
Amorphous InGaZnO (α-IGZO)
Dielectrics
Hafnium compounds
HfO₂/Lu₂O₃/HfO₂ (HLH)
Logic gates
Lu₂O₃ gate dielectric
Rough surfaces
Surface roughness
Thin film transistors
thin-film transistor (TFT)
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Summary:In this brief, a high-performance amorphous InGaZnO (α-IGZO) thin-film transistor (TFT) with a HfO 2 /Lu 2 O 3 /HfO 2 (HLH) sandwich gate dielectric is demonstrated for the first time. Compared with the Lu 2 O 3 dielectric, the α-IGZO TFT device using an HLH sandwich gate dielectric exhibited a low threshold voltage of 0.43 V, a high field-effect mobility of 17.2 cm 2 /Vs, a small subthreshold swing of 104 mV/decade, and a high I ON /I OFF current ratio of 3.08 × 10 -7 , presumably because of the reduction of surface roughness at the dielectric-channel interface. Furthermore, the reliability of voltage stress can be improved using an HLH sandwich dielectric structure.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2015.2411738