A novel structure of MOSFET array to measure ioff-ion with high accuracy and high density

We have successfully developed the new design of MOSFET array structure with high accuracy measurement both for Ion excluding IR drop and Ioff without contamination. We propose measurement algorithm "feedback looped biasing" with kelvin probe structure and canceling method for leakage cont...

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Bibliographic Details
Main Authors: Suzuki, Tsuyoshi, Fukuzaki, Yuzo, Verkest, Diederik, Ohnuma, Hidetoshi, Anchlia, Ankur, Cherman, Vladimir, Oishi, Hidetoshi, Mori, Shigetaka, Ryckaert, Julien, Ogawa, Kazuhisa, Van der Plas, Geert, Beyne, Eric
Format: Conference Proceeding
Language:English
Subjects:
Algorithms
Arrays
CMOS integrated circuits
Conferences
Contamination
Electric potential
Leakage
Microelectronics
Monitoring
MOSFET
MOSFET circuits
MOSFETs
Pollution measurement
Switching circuits
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Summary:We have successfully developed the new design of MOSFET array structure with high accuracy measurement both for Ion excluding IR drop and Ioff without contamination. We propose measurement algorithm "feedback looped biasing" with kelvin probe structure and canceling method for leakage contamination due to array peripherals. This test structure is implemented in scribe line for 28nm technology and beyond. And we get layout dependency of MOSFET characteristics and mismatch characteristics.
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2015.7106095