Monitoring test structure for plasma process induced charging damage using charge-based capacitance measurement (PID-CBCM)

We propose monitoring test structure and measurement technique for plasma process induced charging damage (PID) using charge-based capacitance measurement (CBCM). For evaluating the influence of PID on MOSFET effectively, remarkably small (several tens of fF) gate capacitance of MOSFET can be extrac...

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Bibliographic Details
Main Authors: Mori, Shigetaka, Ogawa, Kazuhisa, Oishi, Hidetoshi, Suzuki, Tsuyoshi, Tomita, Manabu, Bairo, Masaaki, Fukuzaki, Yuzo, Ohnuma, Hidetoshi
Format: Conference Proceeding
Language:English
Subjects:
Antenna measurements
Antennas
Capacitance
Charge pumps
Charging
Conferences
Damage
Density
Facsimile
ISO standards
Monitoring
MOS devices
MOSFETs
Thickness measurement
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Summary:We propose monitoring test structure and measurement technique for plasma process induced charging damage (PID) using charge-based capacitance measurement (CBCM). For evaluating the influence of PID on MOSFET effectively, remarkably small (several tens of fF) gate capacitance of MOSFET can be extracted by eliminating parasitic antenna capacitance. Moreover, we can extract interface trap density from the same CBCM structure using the modified Charge-Pumping measurement.
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2015.7106123