Impact of DC and RF non-conducting stress on nMOS reliability

The increase of leakage current in deep-submicrometer MOS transistors operated below threshold is becoming a reliability concern for scaled technology nodes. Especially high-power analog applications like high efficiency PAs and RF-switches undergo to strong lateral field when V g

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Bibliographic Details
Main Authors: Cattaneo, A., Pinarello, S., Mueller, J.-E, Weigel, R.
Format: Conference Proceeding
Language:English
Subjects:
Degradation
MOSFET
Performance evaluation
Predictive models
Radio frequency
Reliability
Stress
Online Access:Request full text
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Description
Summary:The increase of leakage current in deep-submicrometer MOS transistors operated below threshold is becoming a reliability concern for scaled technology nodes. Especially high-power analog applications like high efficiency PAs and RF-switches undergo to strong lateral field when V g
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2015.7112835