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PdGe on GaAs: A study of the applicability in InGaP/GaAs HBT fabrication

Recently InGaP/GaAs HBTs have demonstrated performance comparable to AlGaAs/GaAs and have proven to be well suited for high-speed and low-noise applications. Despite the excellent performance of InGaP/GaAs HBTs, continued efforts towards reducing the delay associated with the emitter resistance and...

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Main Authors:	Ahmari, D.A., Hattendorf, M.L., Lemmerhirt, D.F., Yang, Q., Hartmann, Q.J., Stillman, G.E.
Format:	Conference Proceeding
Language:	English
Subjects:	Chemicals Contact resistance Fabrication Gallium arsenide Heterojunction bipolar transistors Indium gallium arsenide Laboratories Microelectronics Temperature Wet etching
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creator	Ahmari, D.A. Hattendorf, M.L. Lemmerhirt, D.F. Yang, Q. Hartmann, Q.J. Stillman, G.E.
description	Recently InGaP/GaAs HBTs have demonstrated performance comparable to AlGaAs/GaAs and have proven to be well suited for high-speed and low-noise applications. Despite the excellent performance of InGaP/GaAs HBTs, continued efforts towards reducing the delay associated with the emitter resistance and capacitance are required. To help minimize the emitter resistance, PdGe contacts on n-type GaAs were studied. This experiment studies the behavior of the PdGe alloyed on a hot plate for times less than 30 minutes and compares results to RTA alloys. Also studied is the behavior of the PdGe contacts alloyed in various ambients. Finally, the issues associated with performing a self-aligned emitter etch with PdGe contacts are also discussed.
doi_str_mv	10.1109/ISCS.1998.711716
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fullrecord	<record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_711716</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>711716</ieee_id><sourcerecordid>711716</sourcerecordid><originalsourceid>FETCH-LOGICAL-i174t-84273b124ebde59a57f2f97d5c81d0196781ff219908fdeee4d0a5d7d1eff2cb3</originalsourceid><addsrcrecordid>eNotj0FrhDAUhAOl0LL1Xnp6f0A3zxiT9GalVWGhC7s9L9EkNMWqGHvw39eyncvAfMPAEPKINEGkat-cylOCSslEIArMb0ikhKSCU0Y5z9kdiUL4ops4lzRj96Q-msrCOECli_AMBYTlx6wwOlg-Lehp6n2nW9_7ZQU_QDNU-rj_60L9cgan23njix-HB3LrdB9s9O878vH2ei7r-PBeNWVxiD2KbIlllgrWYprZ1liuNBcudUoY3kk0FFUuJDqXbh-odMZamxmquREG7RZ3LduRp-uu3-Blmv23ntfL9S77BTkaSSI</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>PdGe on GaAs: A study of the applicability in InGaP/GaAs HBT fabrication</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Ahmari, D.A. ; Hattendorf, M.L. ; Lemmerhirt, D.F. ; Yang, Q. ; Hartmann, Q.J. ; Stillman, G.E.</creator><creatorcontrib>Ahmari, D.A. ; Hattendorf, M.L. ; Lemmerhirt, D.F. ; Yang, Q. ; Hartmann, Q.J. ; Stillman, G.E.</creatorcontrib><description>Recently InGaP/GaAs HBTs have demonstrated performance comparable to AlGaAs/GaAs and have proven to be well suited for high-speed and low-noise applications. Despite the excellent performance of InGaP/GaAs HBTs, continued efforts towards reducing the delay associated with the emitter resistance and capacitance are required. To help minimize the emitter resistance, PdGe contacts on n-type GaAs were studied. This experiment studies the behavior of the PdGe alloyed on a hot plate for times less than 30 minutes and compares results to RTA alloys. Also studied is the behavior of the PdGe contacts alloyed in various ambients. Finally, the issues associated with performing a self-aligned emitter etch with PdGe contacts are also discussed.</description><identifier>ISBN: 9780750305563</identifier><identifier>ISBN: 0750305568</identifier><identifier>DOI: 10.1109/ISCS.1998.711716</identifier><language>eng</language><publisher>IEEE</publisher><subject>Chemicals ; Contact resistance ; Fabrication ; Gallium arsenide ; Heterojunction bipolar transistors ; Indium gallium arsenide ; Laboratories ; Microelectronics ; Temperature ; Wet etching</subject><ispartof>Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.467-470</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/711716$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,778,782,787,788,2054,4038,4039,27912,54907</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/711716$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ahmari, D.A.</creatorcontrib><creatorcontrib>Hattendorf, M.L.</creatorcontrib><creatorcontrib>Lemmerhirt, D.F.</creatorcontrib><creatorcontrib>Yang, Q.</creatorcontrib><creatorcontrib>Hartmann, Q.J.</creatorcontrib><creatorcontrib>Stillman, G.E.</creatorcontrib><title>PdGe on GaAs: A study of the applicability in InGaP/GaAs HBT fabrication</title><title>Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors</title><addtitle>ISCS</addtitle><description>Recently InGaP/GaAs HBTs have demonstrated performance comparable to AlGaAs/GaAs and have proven to be well suited for high-speed and low-noise applications. Despite the excellent performance of InGaP/GaAs HBTs, continued efforts towards reducing the delay associated with the emitter resistance and capacitance are required. To help minimize the emitter resistance, PdGe contacts on n-type GaAs were studied. This experiment studies the behavior of the PdGe alloyed on a hot plate for times less than 30 minutes and compares results to RTA alloys. Also studied is the behavior of the PdGe contacts alloyed in various ambients. Finally, the issues associated with performing a self-aligned emitter etch with PdGe contacts are also discussed.</description><subject>Chemicals</subject><subject>Contact resistance</subject><subject>Fabrication</subject><subject>Gallium arsenide</subject><subject>Heterojunction bipolar transistors</subject><subject>Indium gallium arsenide</subject><subject>Laboratories</subject><subject>Microelectronics</subject><subject>Temperature</subject><subject>Wet etching</subject><isbn>9780750305563</isbn><isbn>0750305568</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj0FrhDAUhAOl0LL1Xnp6f0A3zxiT9GalVWGhC7s9L9EkNMWqGHvw39eyncvAfMPAEPKINEGkat-cylOCSslEIArMb0ikhKSCU0Y5z9kdiUL4ops4lzRj96Q-msrCOECli_AMBYTlx6wwOlg-Lehp6n2nW9_7ZQU_QDNU-rj_60L9cgan23njix-HB3LrdB9s9O878vH2ei7r-PBeNWVxiD2KbIlllgrWYprZ1liuNBcudUoY3kk0FFUuJDqXbh-odMZamxmquREG7RZ3LduRp-uu3-Blmv23ntfL9S77BTkaSSI</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Ahmari, D.A.</creator><creator>Hattendorf, M.L.</creator><creator>Lemmerhirt, D.F.</creator><creator>Yang, Q.</creator><creator>Hartmann, Q.J.</creator><creator>Stillman, G.E.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1997</creationdate><title>PdGe on GaAs: A study of the applicability in InGaP/GaAs HBT fabrication</title><author>Ahmari, D.A. ; Hattendorf, M.L. ; Lemmerhirt, D.F. ; Yang, Q. ; Hartmann, Q.J. ; Stillman, G.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i174t-84273b124ebde59a57f2f97d5c81d0196781ff219908fdeee4d0a5d7d1eff2cb3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Chemicals</topic><topic>Contact resistance</topic><topic>Fabrication</topic><topic>Gallium arsenide</topic><topic>Heterojunction bipolar transistors</topic><topic>Indium gallium arsenide</topic><topic>Laboratories</topic><topic>Microelectronics</topic><topic>Temperature</topic><topic>Wet etching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ahmari, D.A.</creatorcontrib><creatorcontrib>Hattendorf, M.L.</creatorcontrib><creatorcontrib>Lemmerhirt, D.F.</creatorcontrib><creatorcontrib>Yang, Q.</creatorcontrib><creatorcontrib>Hartmann, Q.J.</creatorcontrib><creatorcontrib>Stillman, G.E.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ahmari, D.A.</au><au>Hattendorf, M.L.</au><au>Lemmerhirt, D.F.</au><au>Yang, Q.</au><au>Hartmann, Q.J.</au><au>Stillman, G.E.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>PdGe on GaAs: A study of the applicability in InGaP/GaAs HBT fabrication</atitle><btitle>Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors</btitle><stitle>ISCS</stitle><date>1997</date><risdate>1997</risdate><spage>467</spage><epage>470</epage><pages>467-470</pages><isbn>9780750305563</isbn><isbn>0750305568</isbn><abstract>Recently InGaP/GaAs HBTs have demonstrated performance comparable to AlGaAs/GaAs and have proven to be well suited for high-speed and low-noise applications. Despite the excellent performance of InGaP/GaAs HBTs, continued efforts towards reducing the delay associated with the emitter resistance and capacitance are required. To help minimize the emitter resistance, PdGe contacts on n-type GaAs were studied. This experiment studies the behavior of the PdGe alloyed on a hot plate for times less than 30 minutes and compares results to RTA alloys. Also studied is the behavior of the PdGe contacts alloyed in various ambients. Finally, the issues associated with performing a self-aligned emitter etch with PdGe contacts are also discussed.</abstract><pub>IEEE</pub><doi>10.1109/ISCS.1998.711716</doi><tpages>4</tpages></addata></record>
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Chemicals Contact resistance Fabrication Gallium arsenide Heterojunction bipolar transistors Indium gallium arsenide Laboratories Microelectronics Temperature Wet etching
title	PdGe on GaAs: A study of the applicability in InGaP/GaAs HBT fabrication
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T02%3A33%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=PdGe%20on%20GaAs:%20A%20study%20of%20the%20applicability%20in%20InGaP/GaAs%20HBT%20fabrication&rft.btitle=Compound%20Semiconductors%201997.%20Proceedings%20of%20the%20IEEE%20Twenty-Fourth%20International%20Symposium%20on%20Compound%20Semiconductors&rft.au=Ahmari,%20D.A.&rft.date=1997&rft.spage=467&rft.epage=470&rft.pages=467-470&rft.isbn=9780750305563&rft.isbn_list=0750305568&rft_id=info:doi/10.1109/ISCS.1998.711716&rft_dat=%3Cieee_6IE%3E711716%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i174t-84273b124ebde59a57f2f97d5c81d0196781ff219908fdeee4d0a5d7d1eff2cb3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=711716&rfr_iscdi=true