Highly robust self-compliant and nonlinear TaOX/HfOX RRAM for 3D vertical structure in 1TnR architecture

Owing to NAND flash technology facing its scaling limit, resistive random access memory (RRAM) with simple film stack and no cross coupling issue between cells is a promising candidate for future high density memory application [1,2]. The 1TnR architecture with 3D vertical RRAM (VRRAM) structure rea...

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Bibliographic Details
Main Authors: Lin, Y. D., Chen, Y. S., Tsai, K. H., Chen, P. S., Huang, Y. C., Lin, S. H., Gu, P. Y., Chen, W. S., Lee, H. Y., Rahaman, S. Z., Hsu, C. H., Chen, F. T., Ku, T. K.
Format: Conference Proceeding
Language:English
Subjects:
Computer architecture
Hafnium compounds
Robustness
Stress
Switches
Tin
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Summary:Owing to NAND flash technology facing its scaling limit, resistive random access memory (RRAM) with simple film stack and no cross coupling issue between cells is a promising candidate for future high density memory application [1,2]. The 1TnR architecture with 3D vertical RRAM (VRRAM) structure realizes ultra-low bit cost for high compact density array [3,4]. However, this novel 1TnR structure and processes have not been proved yet. To meet requirements of VRRAM array operation, the nonlinear resistive memory with an excellent self-compliance and low current operation is indispensable [5,6]. A large voltage margin for the device operated with compliance current (ΔV COMP ) and high nonlinearity for the device at low resistance state (LRS) with reliable read voltage should be addressed.
ISSN:1524-766X
2690-8174
DOI:10.1109/VLSI-TSA.2015.7117559