A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

• Published in: IEEE transactions on electron devices 2015-07, Vol.62 (7), p.2313-2319
• Main Authors: Chuan Yu Han, Wing Man Tang, Cheung Hoi Leung, Chi-Ming Che, Lai, Peter T.
• Format: Article
• Language: English
• Subjects: Dielectrics; High-κ gate dielectric; La incorporation; Logic gates; low-frequency noise (LFN); Niobium; Organic thin film transistors; organic thin-film transistor (OTFT); Pentacene; transition-metal (TM) oxides; Zirconium
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2015.2432080

The effects of La incorporation in three transition-metal (TM = Y, Zr, and Nb) oxides as gate dielectric of pentacene organic thin-film transistor (OTFT) have been investigated. La incorporated in Zr oxide and Nb oxide greatly decreases their trap density (as confirmed by low-frequency noise measurement) by passivating their oxygen vacancies, resulting in larger pentacene grains grown on them (as shown by atomic force microscopy) and thus higher carrier mobility for the OTFT due to less grain-boundary scattering. The carrier mobility of the ZrLaO- and NbLaO-OTFTs is about 70 times and 300 times higher than that of their counterparts based on ZrO 2 and Nb 2 O 5 , respectively. However, La incorporated in Y 2 O 3 increases its trap density by roughening its surface, causing smaller pentacene grains grown and thus lower carrier mobility. On the other hand, all the three TM elements incorporated in La 2 O 3 can result in more moisture-resistant gate dielectric with smoother surface, resulting in larger pentacene grains grown and thus higher carrier mobility for the OTFT.