Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium

Ferroelectric Si-doped HfO 2 thin films are integrated into three different device stacks with a p+ Ge substrate, a p+ Si substrate, and a TaN bottom metal gate. The ferroelectric behavior of the Si-doped HfO 2 thin films is strongly dependent on the bottom interfaces. The Si-doped HfO 2 thin films...

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Bibliographic Details
Published in:IEEE electron device letters 2015-08, Vol.36 (8), p.766-768
Main Authors: Lomenzo, Patrick D., Takmeel, Qanit, Fancher, Chris M., Chuanzhen Zhou, Rudawski, Nicholas G., Moghaddam, Saeed, Jones, Jacob L., Nishida, Toshikazu
Format: Article
Language:English
Subjects:
Capacitors
FeFETs
Ferroelectrics
Field effect transistors
Hafnium compounds
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Nonvolatile memory
Silicon
Substrates
Switches
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Summary:Ferroelectric Si-doped HfO 2 thin films are integrated into three different device stacks with a p+ Ge substrate, a p+ Si substrate, and a TaN bottom metal gate. The ferroelectric behavior of the Si-doped HfO 2 thin films is strongly dependent on the bottom interfaces. The Si-doped HfO 2 thin films have favorably improved ferroelectric properties on the p+ Ge substrate due to the lack of a dielectric interfacial layer between HfO 2 and Ge. The low-voltage operation and cycling stability of Si-doped HfO 2 ferroelectric thin films on Ge can lead to the realization of high performance, robust Ge ferroelectric field-effect transistors for nonvolatile memory applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2445352