Ruthenium a new thermally stable compensator in InP

Semiinsulating InP has been grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) using different P- and Ru-precursors. Studies of the Ru diffusion coefficient yield, that Ru is a thermally highly stable dopant with a diffusion coefficient of D/sub Ru/(800/spl deg/C)/spl les/1/spl...

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Bibliographic Details
Main Authors: Dadgar, A., Stenzel, O., Kohne, L., Naser, A., Strassburg, M., Stolz, W., Schumann, H., Bimberg, D.
Format: Conference Proceeding
Language:English
Subjects:
Charge carrier processes
Doping
Heat treatment
Indium phosphide
Iron
P-i-n diodes
Performance evaluation
Spectroscopy
Temperature
Zinc
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Summary:Semiinsulating InP has been grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) using different P- and Ru-precursors. Studies of the Ru diffusion coefficient yield, that Ru is a thermally highly stable dopant with a diffusion coefficient of D/sub Ru/(800/spl deg/C)/spl les/1/spl times/10/sup -15/ cm/sup 2//s. Additionally Ru shows no unwanted interdiffusion with p-type dopants. From deep level transient spectroscopy (DLTS) measurements we conclude, that Ru introduces several deep centers in InP which are suited to compensate electrons as well as holes. Resistivities above 5/spl times/10/sup 7/ /spl Omega/ cm and 5/spl times/10/sup 8/ /spl Omega/ cm have been achieved under electron and hole injection conditions, respectively.
ISSN:1092-8669
DOI:10.1109/ICIPRM.1998.712400