InP HBT technology and applications

TRW has the world's only production Molecular Beam Epitaxy (MBE) based GaAs Heterojunction Bipolar Transistor (HBT) technology, delivering over 3 million commercial chips per month, as well as space qualified HBT MMICs. Using this foundation, we have developed the next generation InP-based HBT...

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Bibliographic Details
Main Authors: Streit, D.C., Cowles, J.C., Kobayashi, K.W., Gutierrez-Aitken, A., Block, T.R., Wojotowicz, M., Yamada, F., Kaneshiro, E., Tran, L.T., Grossman, C., Li-Wu Yang, Lammert, M., Leslie, G., Steel, V., Denning, D., Oki, A.K.
Format: Conference Proceeding
Language:English
Subjects:
Application specific integrated circuits
Consumer products
Gallium arsenide
Heterojunction bipolar transistors
Indium phosphide
Integrated circuit technology
MMICs
Molecular beam epitaxial growth
Production
Space technology
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Summary:TRW has the world's only production Molecular Beam Epitaxy (MBE) based GaAs Heterojunction Bipolar Transistor (HBT) technology, delivering over 3 million commercial chips per month, as well as space qualified HBT MMICs. Using this foundation, we have developed the next generation InP-based HBT technology to produce advanced HBT integrated circuits for space and defense applications as well as high volume commercial applications. Here we present performance characteristics for InP HBT ICs for consumer products and advanced space and defense applications.
ISSN:1092-8669
DOI:10.1109/ICIPRM.1998.712402