Measuring complex for analysis of recombination deep traps in semiconductor solar cells

Measuring complex for analysis of recombination deep traps in semiconductor solar cells based on the I-DLTS is described. Measuring complex can be used in the industry of semiconductor solar cells where is necessary to control deep traps concentration and required level of conversion efficiency and...

Full description

Saved in:
Bibliographic Details
Main Authors: Litvinov, Vladimir G., Vishnyakov, Nikolay V., Gudzev, Valery V., Mishustin, Vladislav G., Karabanov, Sergey M., Vikhrov, Sergey P., Karabanov, Andrey S.
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Current measurement
deep level
DLTS
I-DLTS
Photovoltaic cells
Radiative recombination
semiconductor
Semiconductor device measurement
solar cell
Temperature measurement
Transient analysis
trap
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Measuring complex for analysis of recombination deep traps in semiconductor solar cells based on the I-DLTS is described. Measuring complex can be used in the industry of semiconductor solar cells where is necessary to control deep traps concentration and required level of conversion efficiency and quality of solar cells.
DOI:10.1109/ICIT.2015.7125239