Growth of TlInGaAs on InP by gas source MBE

TlInGaAs quaternary layers are, for the first time, grown on InP substrates by gas source MBE. This new semiconductor material system was recently proposed by us for long wavelength optical devices as well as temperature insensitive wavelength laser diodes. During the growth, RHEED pattern shows (2/...

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Bibliographic Details
Main Authors: Takenaka, K., Asahi, H., Koh, H., Asami, K., Gonda, S., Oe, K.
Format: Conference Proceeding
Language:English
Subjects:
Diode lasers
Indium phosphide
Optical devices
Optical surface waves
Pollution measurement
Semiconductor materials
Substrates
Surface contamination
Temperature
X-ray diffraction
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Summary:TlInGaAs quaternary layers are, for the first time, grown on InP substrates by gas source MBE. This new semiconductor material system was recently proposed by us for long wavelength optical devices as well as temperature insensitive wavelength laser diodes. During the growth, RHEED pattern shows (2/spl times/2) reconstructions. X-ray diffraction measurement shows the successful growth of TIInGaAs. PL emission is observed and their temperature variation of PL peak energy is observed to be small.
ISSN:1092-8669
DOI:10.1109/ICIPRM.1998.712693