Temperature And Excitation Dependence Of Photoluminescence From In/sub0.4/Ga/sub0.6/As Quantum Dots

The photoluminescence (PL) measurements for In/sub 0.4/Ga/sub 0.6/As quantum dots (QDs) have been performed at different temperatures and excitations. The QD array is formed on GaAs[001] substrates and has a large surface coverage of /spl sim/90%. An unusual decrease of the PL linewidth with increas...

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Bibliographic Details
Main Authors: Sheng Lan, Akahane, K., Kee-Youn Jang, Kawamura, T., Okada, Y., Kawabe, M.
Format: Conference Proceeding
Language:English
Subjects:
Gallium arsenide
Materials science and technology
Multilevel systems
Photoluminescence
Quantum dots
Solids
Temperature dependence
Temperature measurement
Tunneling
US Department of Transportation
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Summary:The photoluminescence (PL) measurements for In/sub 0.4/Ga/sub 0.6/As quantum dots (QDs) have been performed at different temperatures and excitations. The QD array is formed on GaAs[001] substrates and has a large surface coverage of /spl sim/90%. An unusual decrease of the PL linewidth with increasing temperature (for T
ISSN:1092-8669
DOI:10.1109/ICIPRM.1998.712699