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Temperature And Excitation Dependence Of Photoluminescence From In/sub0.4/Ga/sub0.6/As Quantum Dots

The photoluminescence (PL) measurements for In/sub 0.4/Ga/sub 0.6/As quantum dots (QDs) have been performed at different temperatures and excitations. The QD array is formed on GaAs[001] substrates and has a large surface coverage of /spl sim/90%. An unusual decrease of the PL linewidth with increas...

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Main Authors:	Sheng Lan, Akahane, K., Kee-Youn Jang, Kawamura, T., Okada, Y., Kawabe, M.
Format:	Conference Proceeding
Language:	English
Subjects:	Gallium arsenide Materials science and technology Multilevel systems Photoluminescence Quantum dots Solids Temperature dependence Temperature measurement Tunneling US Department of Transportation
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creator	Sheng Lan Akahane, K. Kee-Youn Jang Kawamura, T. Okada, Y. Kawabe, M.
description	The photoluminescence (PL) measurements for In/sub 0.4/Ga/sub 0.6/As quantum dots (QDs) have been performed at different temperatures and excitations. The QD array is formed on GaAs[001] substrates and has a large surface coverage of /spl sim/90%. An unusual decrease of the PL linewidth with increasing temperature (for T
doi_str_mv	10.1109/ICIPRM.1998.712699
format	conference_proceeding
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The QD array is formed on GaAs[001] substrates and has a large surface coverage of /spl sim/90%. An unusual decrease of the PL linewidth with increasing temperature (for T<50 K) is found, This "abnormal" behaviour has been reported previously but no reasonable explanation is available up to now. Moreover, a slight increase followed by a dramatic decrease of the linewidth at higher temperatures (50-150 K) is observed for the first time. Different mechanisms including relaxation, dissociation and tunneling, which are responsible for the anomalies observed in the PL spectra are identified.</description><identifier>ISSN: 1092-8669</identifier><identifier>ISBN: 9780780342200</identifier><identifier>ISBN: 0780342208</identifier><identifier>DOI: 10.1109/ICIPRM.1998.712699</identifier><language>eng</language><publisher>IEEE</publisher><subject>Gallium arsenide ; Materials science and technology ; Multilevel systems ; Photoluminescence ; Quantum dots ; Solids ; Temperature dependence ; Temperature measurement ; Tunneling ; US Department of Transportation</subject><ispartof>Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. 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No.98CH36129)</title><addtitle>ICIPRM</addtitle><description>The photoluminescence (PL) measurements for In/sub 0.4/Ga/sub 0.6/As quantum dots (QDs) have been performed at different temperatures and excitations. The QD array is formed on GaAs[001] substrates and has a large surface coverage of /spl sim/90%. An unusual decrease of the PL linewidth with increasing temperature (for T<50 K) is found, This "abnormal" behaviour has been reported previously but no reasonable explanation is available up to now. Moreover, a slight increase followed by a dramatic decrease of the linewidth at higher temperatures (50-150 K) is observed for the first time. Different mechanisms including relaxation, dissociation and tunneling, which are responsible for the anomalies observed in the PL spectra are identified.</description><subject>Gallium arsenide</subject><subject>Materials science and technology</subject><subject>Multilevel systems</subject><subject>Photoluminescence</subject><subject>Quantum dots</subject><subject>Solids</subject><subject>Temperature dependence</subject><subject>Temperature measurement</subject><subject>Tunneling</subject><subject>US Department of Transportation</subject><issn>1092-8669</issn><isbn>9780780342200</isbn><isbn>0780342208</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNp9jstqwzAURAVtoWnrH8hKP2D7SnFtaxmclxelScg-qPY1VYkkowckf9_QZF0YmOHMLIaQKYOMMRB527Tb_UfGhKizivFSiAeSiKqGq2YF5wCPZHId8rQuS_FMXrz_AYD3itcT0h1Qj-hkiA7p3PR0ee5UkEFZQxc4ounRdEg_B7r9tsGeolYGffcHV85q2prcxy_Iinwtb6nM557uojQharqwwb-Rp0GePCZ3fyXT1fLQbFKFiMfRKS3d5Xi7Pvu3_AVohEYZ</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Sheng Lan</creator><creator>Akahane, K.</creator><creator>Kee-Youn Jang</creator><creator>Kawamura, T.</creator><creator>Okada, Y.</creator><creator>Kawabe, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>1998</creationdate><title>Temperature And Excitation Dependence Of Photoluminescence From In/sub0.4/Ga/sub0.6/As Quantum Dots</title><author>Sheng Lan ; Akahane, K. ; Kee-Youn Jang ; Kawamura, T. ; Okada, Y. ; Kawabe, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_7126993</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Gallium arsenide</topic><topic>Materials science and technology</topic><topic>Multilevel systems</topic><topic>Photoluminescence</topic><topic>Quantum dots</topic><topic>Solids</topic><topic>Temperature dependence</topic><topic>Temperature measurement</topic><topic>Tunneling</topic><topic>US Department of Transportation</topic><toplevel>online_resources</toplevel><creatorcontrib>Sheng Lan</creatorcontrib><creatorcontrib>Akahane, K.</creatorcontrib><creatorcontrib>Kee-Youn Jang</creatorcontrib><creatorcontrib>Kawamura, T.</creatorcontrib><creatorcontrib>Okada, Y.</creatorcontrib><creatorcontrib>Kawabe, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sheng Lan</au><au>Akahane, K.</au><au>Kee-Youn Jang</au><au>Kawamura, T.</au><au>Okada, Y.</au><au>Kawabe, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Temperature And Excitation Dependence Of Photoluminescence From In/sub0.4/Ga/sub0.6/As Quantum Dots</atitle><btitle>Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129)</btitle><stitle>ICIPRM</stitle><date>1998</date><risdate>1998</risdate><spage>619</spage><epage>622</epage><pages>619-622</pages><issn>1092-8669</issn><isbn>9780780342200</isbn><isbn>0780342208</isbn><abstract>The photoluminescence (PL) measurements for In/sub 0.4/Ga/sub 0.6/As quantum dots (QDs) have been performed at different temperatures and excitations. The QD array is formed on GaAs[001] substrates and has a large surface coverage of /spl sim/90%. An unusual decrease of the PL linewidth with increasing temperature (for T<50 K) is found, This "abnormal" behaviour has been reported previously but no reasonable explanation is available up to now. Moreover, a slight increase followed by a dramatic decrease of the linewidth at higher temperatures (50-150 K) is observed for the first time. Different mechanisms including relaxation, dissociation and tunneling, which are responsible for the anomalies observed in the PL spectra are identified.</abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.1998.712699</doi></addata></record>
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recordid	cdi_ieee_primary_712699
source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Gallium arsenide Materials science and technology Multilevel systems Photoluminescence Quantum dots Solids Temperature dependence Temperature measurement Tunneling US Department of Transportation
title	Temperature And Excitation Dependence Of Photoluminescence From In/sub0.4/Ga/sub0.6/As Quantum Dots
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