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Influence of thermal stress on I-V characteristics and low-frequency noise of AlGaInP UHB-LEDs
Light emitting AlGaInP double heterostructures were exposed to thermal stress at 670 K in order to investigate the influence of aging processes on the I-V characteristics and the low frequency noise. The results reveal a strong dependence of the degradation mechanisms on the operating current. UHB-L...
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creator | Berntgen, J. Lieske, T. Schineller, B. Deufel, M. Heuken, M. Juergensen, H. Heime, K. |
description | Light emitting AlGaInP double heterostructures were exposed to thermal stress at 670 K in order to investigate the influence of aging processes on the I-V characteristics and the low frequency noise. The results reveal a strong dependence of the degradation mechanisms on the operating current. UHB-LEDs, which were only thermally stressed for 9 h, showed nearly no degeneration of the device performance. These thermally stressed diodes can be described by a simple series combination of an ideal light emitting diode and a series resistance during the whole stress duration. In contrast to this, the samples thermally stressed during operation at 20 mA degenerated abruptly after more than 4 h. For the explanation of the I-V dependence on the stress during operation a model was developed. Due to the applied electric field in combination with heat, dark-regions were generated. The development of these non radiating zones is associated with dislocations because of the directional diffusion of dopants into lattice interstitials and strain at the hetero-interfaces. After 9 h, the samples stressed during operation did not emit light up to currents of 100 mA. Furthermore, the low frequency noise spectroscopy proofed itself to be a very sensitive diagnostic tool for detection of aging processes. |
doi_str_mv | 10.1109/ICIPRM.1998.712752 |
format | conference_proceeding |
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The results reveal a strong dependence of the degradation mechanisms on the operating current. UHB-LEDs, which were only thermally stressed for 9 h, showed nearly no degeneration of the device performance. These thermally stressed diodes can be described by a simple series combination of an ideal light emitting diode and a series resistance during the whole stress duration. In contrast to this, the samples thermally stressed during operation at 20 mA degenerated abruptly after more than 4 h. For the explanation of the I-V dependence on the stress during operation a model was developed. Due to the applied electric field in combination with heat, dark-regions were generated. The development of these non radiating zones is associated with dislocations because of the directional diffusion of dopants into lattice interstitials and strain at the hetero-interfaces. After 9 h, the samples stressed during operation did not emit light up to currents of 100 mA. 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No.98CH36129)</title><addtitle>ICIPRM</addtitle><description>Light emitting AlGaInP double heterostructures were exposed to thermal stress at 670 K in order to investigate the influence of aging processes on the I-V characteristics and the low frequency noise. The results reveal a strong dependence of the degradation mechanisms on the operating current. UHB-LEDs, which were only thermally stressed for 9 h, showed nearly no degeneration of the device performance. These thermally stressed diodes can be described by a simple series combination of an ideal light emitting diode and a series resistance during the whole stress duration. In contrast to this, the samples thermally stressed during operation at 20 mA degenerated abruptly after more than 4 h. For the explanation of the I-V dependence on the stress during operation a model was developed. Due to the applied electric field in combination with heat, dark-regions were generated. The development of these non radiating zones is associated with dislocations because of the directional diffusion of dopants into lattice interstitials and strain at the hetero-interfaces. After 9 h, the samples stressed during operation did not emit light up to currents of 100 mA. Furthermore, the low frequency noise spectroscopy proofed itself to be a very sensitive diagnostic tool for detection of aging processes.</description><subject>Aging</subject><subject>Capacitive sensors</subject><subject>Electric resistance</subject><subject>Lattices</subject><subject>Light emitting diodes</subject><subject>Low-frequency noise</subject><subject>Semiconductor process modeling</subject><subject>Thermal degradation</subject><subject>Thermal resistance</subject><subject>Thermal stresses</subject><issn>1092-8669</issn><isbn>9780780342200</isbn><isbn>0780342208</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotUNtKw0AUXFDBWvsDfdof2Hj2kr081ljbQMQi1kfLsruhkTTR3Yj07xutcGAYmBlmDkJzChmlYO7Koty8PGXUGJ0pylTOLtDMKA3jccEYwCWajEJGtJTmGt2k9AEAuWJ6gt7Lrm6_Q-cC7ms87EM82BanIYaUcN_hkrxht7fRuiHEJg2NS9h2Hrf9D6lj-Pq1HnHXN-kvYNGubNlt8HZ9T6rlQ7pFV7VtU5j94xRtH5evxZpUz6uyWFSkoYoNRAFQJUzulfJCUi9yLg0FBRy4d2NrGYSSxhsBRo_EaEEFV4Frx6gfZ07R_JzbhBB2n7E52Hjcnb_BT3YoURI</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Berntgen, J.</creator><creator>Lieske, T.</creator><creator>Schineller, B.</creator><creator>Deufel, M.</creator><creator>Heuken, M.</creator><creator>Juergensen, H.</creator><creator>Heime, K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>1998</creationdate><title>Influence of thermal stress on I-V characteristics and low-frequency noise of AlGaInP UHB-LEDs</title><author>Berntgen, J. ; Lieske, T. ; Schineller, B. ; Deufel, M. ; Heuken, M. ; Juergensen, H. ; Heime, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-70017495d77d461d453691070303dc6696e4769d9409896e9841437e38c21d803</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Aging</topic><topic>Capacitive sensors</topic><topic>Electric resistance</topic><topic>Lattices</topic><topic>Light emitting diodes</topic><topic>Low-frequency noise</topic><topic>Semiconductor process modeling</topic><topic>Thermal degradation</topic><topic>Thermal resistance</topic><topic>Thermal stresses</topic><toplevel>online_resources</toplevel><creatorcontrib>Berntgen, J.</creatorcontrib><creatorcontrib>Lieske, T.</creatorcontrib><creatorcontrib>Schineller, B.</creatorcontrib><creatorcontrib>Deufel, M.</creatorcontrib><creatorcontrib>Heuken, M.</creatorcontrib><creatorcontrib>Juergensen, H.</creatorcontrib><creatorcontrib>Heime, K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Berntgen, J.</au><au>Lieske, T.</au><au>Schineller, B.</au><au>Deufel, M.</au><au>Heuken, M.</au><au>Juergensen, H.</au><au>Heime, K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Influence of thermal stress on I-V characteristics and low-frequency noise of AlGaInP UHB-LEDs</atitle><btitle>Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129)</btitle><stitle>ICIPRM</stitle><date>1998</date><risdate>1998</risdate><spage>741</spage><epage>744</epage><pages>741-744</pages><issn>1092-8669</issn><isbn>9780780342200</isbn><isbn>0780342208</isbn><abstract>Light emitting AlGaInP double heterostructures were exposed to thermal stress at 670 K in order to investigate the influence of aging processes on the I-V characteristics and the low frequency noise. The results reveal a strong dependence of the degradation mechanisms on the operating current. UHB-LEDs, which were only thermally stressed for 9 h, showed nearly no degeneration of the device performance. These thermally stressed diodes can be described by a simple series combination of an ideal light emitting diode and a series resistance during the whole stress duration. In contrast to this, the samples thermally stressed during operation at 20 mA degenerated abruptly after more than 4 h. For the explanation of the I-V dependence on the stress during operation a model was developed. Due to the applied electric field in combination with heat, dark-regions were generated. The development of these non radiating zones is associated with dislocations because of the directional diffusion of dopants into lattice interstitials and strain at the hetero-interfaces. After 9 h, the samples stressed during operation did not emit light up to currents of 100 mA. Furthermore, the low frequency noise spectroscopy proofed itself to be a very sensitive diagnostic tool for detection of aging processes.</abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.1998.712752</doi><tpages>4</tpages></addata></record> |
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identifier | ISSN: 1092-8669 |
ispartof | Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.741-744 |
issn | 1092-8669 |
language | eng |
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source | IEEE Xplore All Conference Series |
subjects | Aging Capacitive sensors Electric resistance Lattices Light emitting diodes Low-frequency noise Semiconductor process modeling Thermal degradation Thermal resistance Thermal stresses |
title | Influence of thermal stress on I-V characteristics and low-frequency noise of AlGaInP UHB-LEDs |
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