Second order temperature compensated piezoelectrically driven 23 MHz heavily doped silicon resonators with ±10 ppm temperature stability

We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40 ... + 85°C. The temperature compensation mechanism is entirely passive,...

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Bibliographic Details
Main Authors: Jaakkola, Antti, Pekko, Panu, Dekker, James, Prunnila, Mika, Pensala, Tuomas
Format: Conference Proceeding
Language:English
Subjects:
Frequency measurement
Micromechanical devices
Resonant frequency
Silicon
Temperature
Temperature measurement
Thermal stability
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Summary:We report quartz level temperature stability of piezoelectrically driven silicon MEMS resonators. Frequency stability of better than ±10 ppm is measured for 23 MHz extensional mode resonators over a temperature range of T = -40 ... + 85°C. The temperature compensation mechanism is entirely passive, relying on the tailored elastic properties of heavily doped silicon with a doping level of n > 10 20 cm -3 , and on an optimized resonator geometry. The result highlights the potential of silicon MEMS resonators to function as pin-to-pin compatible replacements for quartz crystals without any active temperature compensation.
ISSN:2327-1914
DOI:10.1109/FCS.2015.7138871