Two-dimensional device simulation for radio frequency performance of AlGaN/GaN HEMT

In order to obtain better high frequency performance for GaN-based devices, we investigate the influence of the gate length L g , the gate-source space L gs , the gate-drain space L gd , and the thickness of barrier AlGaN on frequency performance of AlGaN/GaN high electron mobility transistors (HEMT...

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Bibliographic Details
Main Authors: Zhang, Lin-Qing, Huang, Hong-Fan, Liu, Xiao-Yong, Shi, Jin-Shan, Liu, Zhuo, Zhao, Sheng-Xun, Wang, Peng-Fei
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
Devices
Gallium nitride
Gallium nitrides
Glass transition temperature
High electron mobility transistors
Logic gates
Radio frequency
Semiconductor devices
Semiconductors
Simulation
Wide band gap semiconductors
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Summary:In order to obtain better high frequency performance for GaN-based devices, we investigate the influence of the gate length L g , the gate-source space L gs , the gate-drain space L gd , and the thickness of barrier AlGaN on frequency performance of AlGaN/GaN high electron mobility transistors (HEMTs) using silvaco TCAD simulation. Besides, the importance of Ohmic contact resistance R c to current-gain cutoff frequency f T is also presented by our simulation. It presents that the f T increases dramatically with the decrease of L g and R c while L gd and L gs affect f T lightly. Meanwhile, the optimized thickness of AlGaN barrier layer is obtained in our structure.
ISSN:2158-2297
2158-2297
DOI:10.1109/CSTIC.2015.7153324