A simple model for ultra-low specific contact resistivity metal- interfacial layer -semiconductor contacts

A simple, physics-based model is developed for study of ultra-low specific contact resistivity metal-interfacial layer-semiconductor (M-I-S) contacts. Reduction in metal induced gap states (MIGS) density and Fermi level de-pinning in metal-semiconductor interface reduce the Schottky barrier height (...

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Bibliographic Details
Main Authors: Huang, Bencheng, Liu, Yingming, Jing, Xuezhen, Zhang, Beichao, Wu, Jingang, Gao, Liming, Xie, Chaoying
Format: Conference Proceeding
Language:English
Subjects:
China
Conferences
Contact
Density
Electric contacts
Electrical resistivity
Fermi level de-pinning
II-VI semiconductor materials
Indium tin oxide
Insulators
Joining
M-I-S contacts
metal induced gap states
Performance evaluation
Schottky barrier height
Semiconductors
Silicon
specific contact resistivity
Zinc oxide
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Summary:A simple, physics-based model is developed for study of ultra-low specific contact resistivity metal-interfacial layer-semiconductor (M-I-S) contacts. Reduction in metal induced gap states (MIGS) density and Fermi level de-pinning in metal-semiconductor interface reduce the Schottky barrier height (SBH). Be coupled with electron transport model, the specific contact resistivity in different M-I-S system can be calculated.
ISSN:2158-2297
2158-2297
DOI:10.1109/CSTIC.2015.7153393