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Investigation of a-SiOx:H films as passivation layer in heterojunction interface

In this study, the intrinsic hydrogenated amorphous silicon oxide (a-SiOx:H) thin films were prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). High density plasma of ECR-CVD has many advantages: (1) faster deposition rate, (2) no electrode contamination, (3) low ion bomba...

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Bibliographic Details
Main Authors: Che-Hung Yeh, Yen-Ho Chu, Chien-Chieh Lee, Yu-Lin Hsieh, Shian-Ming Liu, Jenq-Yang Chang, I-Chen Chen, Li, Tomi T.
Format: Conference Proceeding
Language:English
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Summary:In this study, the intrinsic hydrogenated amorphous silicon oxide (a-SiOx:H) thin films were prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). High density plasma of ECR-CVD has many advantages: (1) faster deposition rate, (2) no electrode contamination, (3) low ion bombardment. The process parameters effect on a-SiOx:H thin films such as dilution ratio was investigated. In addition, this material will be applied to amorphous silicon / crystalline silicon heterojunction solar cells and improved the open-circuit voltage of solar cells.
ISSN:2158-2297
2158-2297
DOI:10.1109/CSTIC.2015.7153397