Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O2 Plasma Treatment

The performance and stability improvement of back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) by post CF 4 +O 2 plasma treatment is investigated. It is revealed that the metal residue of the wet-etching of source/drain electrodes degrades TFT performance an...

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Bibliographic Details
Published in:IEEE electron device letters 2015-09, Vol.36 (9), p.911-913
Main Authors: Xiang Liu, Wang, Lisa Ling, Hehe Hu, Xinhong Lu, Ke Wang, Gang Wang, Shengdong Zhang
Format: Article
Language:English
Subjects:
a-IGZO TFTs
Back-channel-etch (BCE)
Logic gates
Metals
Performance evaluation
Plasma treatment
Plasmas
Stress
Thin film transistors
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Summary:The performance and stability improvement of back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) by post CF 4 +O 2 plasma treatment is investigated. It is revealed that the metal residue of the wet-etching of source/drain electrodes degrades TFT performance and aggravates the positive threshold voltage (V th ) shift under positive gate bias stress. It is demonstrated that the CF 4 +O 2 plasma treatment effectively removes the metal residue and remarkably improves device performance and the V th stability. This improvement is attributed to oxygen vacancy repairing at the back channel interface of the a-IGZO TFT by the O free radicals generated by the O 2 plasma.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2456034